A Ka 4-Stack Power Amplifier in 130-nm SiGe BiCMOS

被引：0

作者：

Zhang, Hao ^{[1
]}

Xie, Kenan ^{[2
]}

Wang, Keping ^{[2
]}

机构：

[1] Nanjing Res Inst Elect Technol, Nanjing, Peoples R China

[2] Tianjin Univ, Sch Microelect, EAST Lab, Tianjin, Peoples R China

来源：

2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a single-stage SiGe BiCMOS power amplifier is demonstrated for 32-38 GHz with the stacked BJTs. To maintain a wideband bandwidth, interstage shunt inductors are used to resonate out the parasitic capacitance between the stacked BJTs. The Wilkinson power divider/combiner are also used to boost the output power. The power amplifier is designed in a 130nm SiGe BiCMOS technology. It achieves a saturated output power (P-SAT) of 21 dBm and a peak PAE of 39%. The gain is larger than 17.5 dB from 32-38 GHz. The chip area is 2.09 mm(2) including pads.

引用

页数：3

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