A Ka 4-Stack Power Amplifier in 130-nm SiGe BiCMOS

被引：0

作者：

Zhang, Hao ^{[1
]}

Xie, Kenan ^{[2
]}

Wang, Keping ^{[2
]}

机构：

[1] Nanjing Res Inst Elect Technol, Nanjing, Peoples R China

[2] Tianjin Univ, Sch Microelect, EAST Lab, Tianjin, Peoples R China

来源：

2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a single-stage SiGe BiCMOS power amplifier is demonstrated for 32-38 GHz with the stacked BJTs. To maintain a wideband bandwidth, interstage shunt inductors are used to resonate out the parasitic capacitance between the stacked BJTs. The Wilkinson power divider/combiner are also used to boost the output power. The power amplifier is designed in a 130nm SiGe BiCMOS technology. It achieves a saturated output power (P-SAT) of 21 dBm and a peak PAE of 39%. The gain is larger than 17.5 dB from 32-38 GHz. The chip area is 2.09 mm(2) including pads.

引用

页数：3

共 50 条

[31] Terahertz Channel Characterization Using a Broadband Frequency Comb Radiator in 130-Nm SiGe BiCMOS [J].

Razavian, Sam ;

Hosseini, Mostafa ;

Mehta, Yash ;

Babakhani, Aydin .

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2021, 11 (03) :269-276

[32] A 13.5-dBm 200-255-GHz 4-Way Power Amplifier and Frequency Source in 130-nm BiCMOS [J].

Eissa, Mohamed Hussein ;

Malignaggi, Andrea ;

Kissinger, Dietmar .

IEEE SOLID-STATE CIRCUITS LETTERS, 2019, 2 (11) :268-271

[33] Solid-State Terahertz Superresolution Imaging Device in 130-nm SiGe BiCMOS Technology [J].

Grzyb, Janusz ;

Heinemann, Bernd ;

Pfeiffer, Ullrich R. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (11) :4357-4372

[34] A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS [J].

Lammert, V. ;

Heine, C. ;

Wessel, J. ;

Jamal, F. I. ;

Kissinger, D. ;

Geiselbrechtinger, A. ;

Issakov, V. .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (10) :1628-1632

[35] A Compact C-band EPR-on-a-chip Transceiver in 130-nm SiGe BiCMOS [J].

Lotfi, Hadi ;

Hassan, Mohamed Atef ;

Kern, Michal ;

Anders, Jens .

PRIME 2022: 17TH INTERNATIONAL CONFERENCE ON PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS, 2022, :65-68

[36] Widely tunable THz source based on constructive wave oscillator in a 130-nm SiGe BiCMOS [J].

Ariyak, Goker .

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2025, 122 (03)

[37] A 200-GHz Inductively Tuned VCO With-7-dBm Output Power in 130-nm SiGe BiCMOS [J].

Chiang, Pei-Yuan ;

Momeni, Omeed ;

Heydari, Payam .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (10) :3666-3673

[38] 220-320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology [J].

Eissa, Mohamed Hussein ;

Fischer, Gunter ;

Mausolf, Thomas ;

Ruecker, Holger ;

Malignaggi, Andrea ;

Kahmen, Gerhard .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (11) :1335-1338

[39] Analysis and Design of D-band High Output Power Signal Sources in 130-nm SiGe BiCMOS Process [J].

Zhou, Peigen ;

Chen, Jixin ;

Hou, Debin ;

Hong, Wei .

2021 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS 2021), 2021,

[40] A 15.7-dBm 164.270 GHz Power Amplifier with Asymmetric Slotline-Based Series-Parallel Combiner in 130-nm SiGe BiCMOS Technology [J].

Park, Gunwoo ;

Kim, Hyunjoon ;

Jeon, Sanggeun .

2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024, 2024, :195-198

← 1 2 3 4 5 →