A Ka 4-Stack Power Amplifier in 130-nm SiGe BiCMOS

被引：0
|
作者：
Zhang, Hao [1 ]
Xie, Kenan [2 ]
Wang, Keping [2 ]
机构：
[1] Nanjing Res Inst Elect Technol, Nanjing, Peoples R China
[2] Tianjin Univ, Sch Microelect, EAST Lab, Tianjin, Peoples R China
来源：
2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020) | 2020年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a single-stage SiGe BiCMOS power amplifier is demonstrated for 32-38 GHz with the stacked BJTs. To maintain a wideband bandwidth, interstage shunt inductors are used to resonate out the parasitic capacitance between the stacked BJTs. The Wilkinson power divider/combiner are also used to boost the output power. The power amplifier is designed in a 130nm SiGe BiCMOS technology. It achieves a saturated output power (P-SAT) of 21 dBm and a peak PAE of 39%. The gain is larger than 17.5 dB from 32-38 GHz. The chip area is 2.09 mm(2) including pads.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology
    Zhou P.
    Chen J.
    Yan P.
    Hou D.
    Gao H.
    Hong W.
    Chen, Jixin (jxchen@seu.edu.cn), 1600, Institute of Electrical and Electronics Engineers Inc. (04): : 44 - 47
  • [2] A 28-GHz Harmonic-Tuned Power Amplifier in 130-nm SiGe BiCMOS
    Sarkar, Anirban
    Floyd, Brian A.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (02) : 522 - 535
  • [3] Thermal Analysis and Design of a Ka-Band Power Amplifier in 130 nm SiGe BiCMOS
    Haag, Alexander
    Kaynak, Mehmet
    Ulusoy, Ahmet Cagri
    2023 IEEE 23RD TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2023, : 47 - 50
  • [4] A 160 GHz High Output Power and High Efficiency Power Amplifier in a 130-nm SiGe BiCMOS Technology
    Li, Xingcun
    Chen, Wenhua
    Wang, Yunfan
    Feng, Zhenghe
    2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 199 - 202
  • [5] A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology
    Ali, Abdul
    Colantonio, Paolo
    Giannini, Franco
    Kissinger, Dietmar
    Ng, Herman Jalli
    Yun, Jongwon
    2019 14TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2019), 2019, : 164 - 167
  • [6] A 440540-GHz Transmitter in 130-nm SiGe BiCMOS
    Guener, Alper
    Mausolf, Thomas
    Wessel, Jan
    Kissinger, Dietmar
    Schmalz, Klaus
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (06) : 779 - 782
  • [7] Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS
    Smirnova, Kateryna
    Bohn, Christian
    Kaynak, Mehmet
    Ulusoy, Ahmet Cagri
    IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2023, 33 (08): : 1171 - 1174
  • [8] Low-Power Ka- and V-Band Miller Compensated Amplifiers in 130-nm SiGe BiCMOS Technology
    Sutbas, Batuhan
    Ng, Herman Jalli
    Wessel, Jan
    Koelpin, Alexander
    Kahmen, Gerhard
    2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 71 - 74
  • [9] A 20-30 GHz High Efficiency Power Amplifier IC with an Adaptive Bias Circuit in 130-nm SiGe BiCMOS
    Chen, Cuilin
    Xu, Xiao
    Yang, Xin
    Sugiura, Tsuyoshi
    Yoshimasu, Toshihiko
    2017 IEEE 17TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2017, : 88 - 90
  • [10] Differential Broadband Transimpedance Amplifier in 130 nm SiGe BiCMOS
    Kosykh, Anatoly, V
    Zavyalov, Sergey A.
    Fakhrutdinov, Rodion R.
    Murasov, Konstantin, V
    Wolf, Ruslan A.
    2018 19TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2018), 2018, : 127 - 131
12345