Negative magnetoresistance in Dirac semimetal Cd3As2 in the variable range hopping regime

被引：4

作者：

Limouny, L. ^{[1
]}

Dlimi, S. ^{[2
]}

El Kaaouachi, A. ^{[3
]}

机构：

[1] Univ Moulay Ismail, Phys Dept, ESIM, BP 509, Errachidia 52000, Morocco

[2] Fac Sci, Phys Dept, Agadir 80000, Morocco

[3] MPAC Grp, Fac Sci, BP 8106, Agadir 80000, Morocco

来源：

BULLETIN OF MATERIALS SCIENCE | 2021年 / 44卷 / 03期

关键词：

Cd3As2; Dirac semimetal; negative magnetoresistance; quantum interference; localized magnetic moments; Langevin function; ELECTRICAL-RESISTIVITY; SI-MOSFETS; ORBITAL MAGNETOCONDUCTANCE; CONDUCTION; TRANSPORT; MOBILITY; INTERFERENCE; LOCALIZATION; TEMPERATURE; SILICON;

D O I：

10.1007/s12034-021-02485-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium arsenide (Cd3As2) is a Dirac semimetal intensively investigated in the last decade due to its stability and high mobility. Cd3As2 shows large negative magnetoresistance (NMR) over a wide range of magnetic field. Such NMR has been analysed in the framework of localized magnetic field and quantum interference theories. At low magnetic fields, quantum interference theory is consistent with the experimental data which can be described by variable range hopping (VRH) in the presence of a soft Coulomb gap (Efros-Shklovskii VRH). On the other hand, at moderate magnetic fields, the data are well described by the localized magnetic moment theory and the NMR is well approximated by the Langevin function.

引用

页数：6

共 60 条

[1]

Agrinskaya N. V., 1989, Soviet Physics - Solid State, V31, P1996

[2] Longitudinal Negative Magnetoresistance and Magnetotransport Phenomena in Conventional and Topological Conductors [J].

Andreev, A. V. ;

Spivak, B. Z. .

PHYSICAL REVIEW LETTERS, 2018, 120 (02)

[3] Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP [J].

Arnold, Frank ;

Shekhar, Chandra ;

Wu, Shu-Chun ;

Sun, Yan ;

dos Reis, Ricardo Donizeth ;

Kumar, Nitesh ;

Naumann, Marcel ;

Ajeesh, Mukkattu O. ;

Schmidt, Marcus ;

Grushin, Adolfo G. ;

Bardarson, Jens H. ;

Baenitz, Michael ;

Sokolov, Dmitry ;

Borrmann, Horst ;

Nicklas, Michael ;

Felser, Claudia ;

Hassinger, Elena ;

Yan, Binghai .

NATURE COMMUNICATIONS, 2016, 7

[4] PHYSICAL INTERPRETATION OF WEAK LOCALIZATION - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J].

BERGMANN, G .

PHYSICAL REVIEW B, 1983, 28 (06) :2914-2920

[5] Gigantic negative magnetoresistance in the bulk of a disordered topological insulator [J].

Breunig, Oliver ;

Wang, Zhiwei ;

Taskin, A. A. ;

Lux, Jonathan ;

Rosch, Achim ;

Ando, Yoichi .

NATURE COMMUNICATIONS, 2017, 8

[6] Magnetic moments in graphene with vacancies [J].

Chen, Jing-Jing ;

Wu, Han-Chun ;

Yu, Da-Peng ;

Liao, Zhi-Min .

NANOSCALE, 2014, 6 (15) :8814-8821

[7] HOPPING CONDUCTION IN DOPED SILICON - THE APPARENT ABSENCE OF QUANTUM INTERFERENCE [J].

DAI, PH ;

FRIEDMAN, JR ;

SARACHIK, MP .

PHYSICAL REVIEW B, 1993, 48 (07) :4875-4878

[8] Negative Magnetoresistance without Chiral Anomaly in Topological Insulators [J].

Dai, Xin ;

Du, Z. Z. ;

Lu, Hai-Zhou .

PHYSICAL REVIEW LETTERS, 2017, 119 (16)

[9]

Dlimi S, 2020, LITH J PHYS, V60, P167

[10]

Dlimi S, 2013, J OPTOELECTRON ADV M, V15, P1222

← 1 2 3 4 5 6 →