Antiferromagnetic Spin Wave Field-Effect Transistor

被引:109
作者
Cheng, Ran [1 ]
Daniels, Matthew W. [1 ]
Zhu, Jian-Gang [2 ]
Xiao, Di [1 ]
机构
[1] Carnegie Mellon Univ, Dept Phys, 5000 Forbes Ave, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, 5000 Forbes Ave, Pittsburgh, PA 15213 USA
基金
美国国家科学基金会;
关键词
RESONANCE;
D O I
10.1038/srep24223
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale.
引用
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页数:6
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