Magnetic oxide semiconductors

被引：201
作者：
Fukumura, T [1 ]
Toyosaki, H [1 ]
Yamada, Y [1 ]
机构：
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 04期
关键词：
D O I：
10.1088/0268-1242/20/4/012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of research on various magnetic oxide semiconductors. The magnetization, magneto-optical effect and magneto-transport such as the anomalous Hall effect are examined from the viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.
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收藏
页码：S103 / S111
页数：9
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