Temperature Dependence of Thin Film Spiral Inductors on Alumina over a Temperature Range of 25 to 475° C

被引:9
|
作者
Ponchak, George E. [1 ]
Jordan, Jennifer L. [1 ]
Scardelletti, Maximilian C. [1 ]
机构
[1] NASA Glenn Res Ctr, Cleveland, OH 44135 USA
来源
2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年
关键词
PERFORMANCE;
D O I
10.1109/ECTC.2010.5490775
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present an analysis of inductors on an Alumina substrate over the temperature range of 25 to 475 degrees C. Five sets of inductors, each set consisting of a 1.5, 2.5, 3.5, and a 4.5 turn inductor with different line width and spacing, were measured on a high temperature probe station from 10 MHz to 30 GHz. From these measured characteristics, it is shown that the inductance is nearly independent of temperature for low frequencies compared to the self resonant frequency, the parasitic capacitances are independent of temperature, and the resistance varies nearly linearly with temperature. These characteristics result in the self resonant frequency decreasing by only a few percent as the temperature is increased from 25 to 475 degrees C, but the maximum quality factor decreases by a factor of 2 to 3. These observations based on measured data are confirmed through 2D simulations using Sonnet software.
引用
收藏
页码:713 / 719
页数:7
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