Investigations on the degradation, of visible laser diodes under, gamma-ray irradiation

被引:1
作者
Sporea, DG [1 ]
Florean, A [1 ]
机构
[1] Natl Inst Lasers Plasma & Radiat Phys, RO-76900 Magurele, Romania
关键词
gamma-ray irradiation; semiconductor laser diode;
D O I
10.1016/S0920-3796(03)00369-7
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
The possible use of semiconductor optoelectronic devices (laser diodes, light emitting diodes, photodetectors) as component parts of remote sensing and diagnostics systems, for different robotic setups in nuclear equipment or for optical fiber-based communication led to the intensive investigations of these components as they operate in radiation environment. We report our research on the evaluation of the gamma-ray induced degradation of several semiconductor laser diodes, emitting at three visible wavelengths, in order to make a preliminary assessment for their possible use in fusion installations. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:877 / 880
页数:4
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