Giant two-way shape memory effect in high-temperature Ni-Mn-Ga single crystal

被引：20

作者：

Chernenko, V. A. ^{[1
,2
]}

Villa, E. ^{[3
]}

Besseghini, S. ^{[3
]}

Barandiaran, J. M. ^{[1
]}

机构：

[1] Univ del Pai Vasco, Dpto Elect & Elect, POB 644, Bilbao 48080, Spain

[2] Basque Foundat Sci, Ikerbasque, Bilbao 48011, Spain

[3] CNR, IENI, I-23900 Lecce, Italy

来源：

3RD INTERNATIONAL SYMPOSIUM ON SHAPE MEMORY MATERIALS FOR SMART SYSTEMS/E-MRS 2010 SPRING MEETING | 2010年 / 10卷

关键词：

high-temperature Ni-Mn-Ga Heusler alloy; two-way shape memory effect; stress-strain cycling; PHASE-TRANSFORMATIONS; ALLOYS; STABILITY; NI2MNGA;

D O I：

10.1016/j.phpro.2010.11.081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A perfect two-way shape memory effect (TWSME) with reversible strain of about 9% has been found in the high-temperature Ni57.5Mn22.5Ga20.0 single crystal transforming into 2M non-modulated martensitic phase. Two thermal/mechanical treatment routes were utilized in the experimental procedures. The outstanding high-temperature TWSME is observed as a result of tensile stress-strain cycling along < 100 > axis involving huge superelastic strains due to stress-induced martensitic transformation. It is argued that the TWSME is related to the anisotropic internal stresses produced by a network of lattice defects. The defects are generated in the course of oriented growth/shrinkage of the dominating martensitic variant in the tensile sample. (C) 2010 Published by Elsevier Ltd

引用

页码：94 / 98

页数：5

共 24 条

[1] Shape memory and martensite deformation response of Ni2MnGa [J].