A Q-factor enhancement technique for MMIC inductors
被引:47
作者:
Danesh, M
论文数: 0引用数: 0
h-index: 0
机构:
Univ Toronto, Toronto, ON, CanadaUniv Toronto, Toronto, ON, Canada
Danesh, M
[1
]
Long, JR
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h-index: 0
机构:
Univ Toronto, Toronto, ON, CanadaUniv Toronto, Toronto, ON, Canada
Long, JR
[1
]
Hadaway, RA
论文数: 0引用数: 0
h-index: 0
机构:
Univ Toronto, Toronto, ON, CanadaUniv Toronto, Toronto, ON, Canada
Hadaway, RA
[1
]
Harame, DL
论文数: 0引用数: 0
h-index: 0
机构:
Univ Toronto, Toronto, ON, CanadaUniv Toronto, Toronto, ON, Canada
Harame, DL
[1
]
机构:
[1] Univ Toronto, Toronto, ON, Canada
来源:
1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM
|
1998年
关键词:
D O I:
10.1109/RFIC.1998.682084
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
An increase of 50% in the peak Q-factor and a wider operating bandwidth for monolithic inductors is achieved by exciting a microstrip structure differentially. Conventional excitation of a 8 nH spiral inductor fabricated in a production silicon IC technology resulted in a peak (measured) Q-factor of 6.6 at 1.6 GHz, while the differential connection showed a maximum Q-factor of 9.7 at 2.5 GHz. These experimental results compared favorably with the behaviour predicted from simulation.