Time resolved spectroscopy of mid-band-gap emissions in Si-doped GaN

被引：9
作者：
Seitz, R [1 ]
Gaspar, C
Monteiro, T
Pereira, E
Leroux, M
Beaumont, B
Gibart, P
机构：
[1] Univ Aveiro, Dept Fis, P-3810 Aveiro, Portugal
[2] CNRS, CRHEA, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
GaN; Si-doping; time resolved luminescence; mid-band-gap emissions;
D O I：
10.1016/S0022-0248(98)00190-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Silicon is until now the most promising dopant for n-type GaN. Besides the near-band-gap emission centred at 3.461 eV, which becomes broader with increasing Si concentration also transitions at lower energies are observed. These emissions decrease strongly when the silicon concentration increases. While the near-band-gap emission is due to fast transitions (with decays shorter than 10 mu s) the lower energy emissions have longer components whose behaviour is discussed. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：546 / 550
页数：5
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