Plasma charging damage during over-etch time of aluminum

被引：5

作者：

Shin, H ^{[1
]}

Park, G ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(98)00104-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There has been a question as to when the oxide damage occurs during plasma etching process. In this paper, we performed experiments to investigate when the plasma etch damage is done to the oxide. Plasma induced ride charging occurs mainly during the over-etch time. There is no measurable additional damage during the moment of plasma turn-on and off. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：911 / 913

页数：3

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