Development of GaAs pseudomorphic HEMTs at W-band

被引：0
|
作者：
Zhu, GL
Yuan, MW
Liu, CH
Qiu, W
Nie, HJ
机构：
来源：
ICMWFST '96 - 1996 4TH INTERNATIONAL CONFERENCE ON MILLIMETER WAVE AND FAR INFRARED SCIENCE AND TECHNOLOGY, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/ICMWFT.1996.574718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Development of GaAs pseudomorphic HEMTs (PHEMTs) at W- band without using electron beam direct writing is described end obtained result Is reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by conventional ultra-violet photolithograph technique.
引用
收藏
页码：66 / 69
页数：4
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