Losses in CuInSe2-based thin film monolithic tandem solar cells

被引：15

作者：

Shafarman, WN ^{[1
]}

Paulson, PD ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488111

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Two critical aspects for the development of tandem solar cells using CulnSe(2)-alloy materials are addressed. First, a structure for monolithic tandem solar cells using wide and narrow bandgap Cu(InGa)Se-2-alloys in the top and bottom cells is demonstrated. This structure uses an ITO layer as both back contact to the wide bandgap Cu(InGa)Se-2 and interconnect to the bottom cell. Three different options for the emitter in the bottom cell are compared. Second, progress on the wide bandgap cell using the Cu(InGa)(SeS)(2) system is presented. and different loss mechanisms in Cu(InGa)Se-2 and CulnS(2) based devices are identified. Efficiency with Cu(InGa)Se-2 is reduced by lower optical absorption and poor current collection while with CuInS2, it is reduced by interface recombination.

引用

页码：231 / 234

页数：4

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