Preparation and Characterization of Transparent Conducting Mn and Ni-Doped Zinc Oxide Films Prepared by Successive Ionic Layer Adsorption and Reaction Method
被引:5
作者:
Karunakaran, M.
论文数: 0引用数: 0
h-index: 0
机构:
Alagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, IndiaAlagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Karunakaran, M.
[1
]
Chandrasekar, L. Bruno
论文数: 0引用数: 0
h-index: 0
机构:
Periyar Maniammai Inst Sci & Technol, Dept Phys, Thanjavur 613403, Tamil Nadu, IndiaAlagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Chandrasekar, L. Bruno
[2
]
Kasirajan, K.
论文数: 0引用数: 0
h-index: 0
机构:
Alagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, IndiaAlagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Kasirajan, K.
[1
]
Chandramohan, R.
论文数: 0引用数: 0
h-index: 0
机构:
Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, IndiaAlagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
Chandramohan, R.
[3
]
机构:
[1] Alagappa Govt Arts Coll, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[2] Periyar Maniammai Inst Sci & Technol, Dept Phys, Thanjavur 613403, Tamil Nadu, India
[3] Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, India
SILAR Method;
Hexagonal;
Band Gap;
Optical Constants;
ZNO THIN-FILMS;
D O I:
10.1166/jno.2020.2750
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00-3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Xinli Li
Ming Yang
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Ming Yang
Di Zhu
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Di Zhu
Lihua Li
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Lihua Li
Zhanhong Ma
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Zhanhong Ma
Xiangmei Ning
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Xiangmei Ning
Fengzhang Ren
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Fengzhang Ren
Jinliang Huang
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Jinliang Huang
Yongjun Gu
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Yongjun Gu
Bo H. Kim
论文数: 0引用数: 0
h-index: 0
机构:Henan University of Science and Technology,School of Materials Science and Engineering, Innovation Center of Nonferrous Metals of Henan Province, Henan Key Laboratory of Non
Bo H. Kim
Journal of Electronic Materials,
2020,
49
: 3242
-
3250