Development of Si monolithic (Ba, Sr)TiO3 thin-film ferroelectric microbolometers for uncooled chopperless infrared sensing

被引：23

作者：

Xu, HP ^{[1
]}

Hashimoto, K ^{[1
]}

Mukaigawa, T ^{[1
]}

Zhu, H ^{[1
]}

Kubo, R ^{[1
]}

Usuki, T ^{[1
]}

Kishihara, H ^{[1
]}

Noda, M ^{[1
]}

Suzuki, Y ^{[1
]}

Okuyama, M ^{[1
]}

机构：

[1] Technol Res Inst Osaka Prefecture, Osaka Prefecture Super Eye Image Sensor Project, Osaka 5941157, Japan

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXVI | 2000年 / 4130卷

关键词：

BST ferroelectric thin film; ferroelectric microbolometer; thermal image sensing; uncooled infrared image sensor; micromachining; thermal isolation membranes; monolithic process; pulsed laser deposition; metal organic decomposition; grain-size effect; ferroelectric bolometric effect;

D O I：

10.1117/12.409856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have been developing a total monolithic microbolometer technology for uncooled thermal sensing along the route from fabricating pixels of thin-film ferroelectric bolometers on micromachined Si substrates. Toward achieving this objective, sensor material of(Ba0.75Sr0.25)TiO3 (BST) has been prepared into thin-film form and been investigated to obtain a large temperature coefficient of dielectric constant (TCD) within the ambient temperature region. Operated in our proposed dynamic pulse-biased mode, the infrared responsivity ( R-v) of sensor pixels is analyzed to reflect how those materials properties of BST film dominate the ultimate array performances. This new ferroelectric bolometer is expected to provide value-added merits of chopperless operation and high sensitivity enhanced by pulsed bias. In this paper, pixels of C-C balanced BST thin-film microbolometers have been fabricated by integrating Si-bulk micromachining and ferroelectric thin-film processing. Both pulsed laser deposition (PLD) and metal organic decomposition (MOD) methods have been employed in preparing BST films on those micromachined silicon substrates. Both the films show similar insufficient bolometric behavior with TCD-values smaller than 1%/K. Under pulsed bias, chopperless operation of pixels of sofabricated microbolometers was confirmed. PLD enabled low-temperature preparation of high-quality films at 520 degreesC, so renders it for cutting-edge investigations to attain the TCD-value that demonstrated in BST ceramic plate by preparing large-grained, stress-free, mum-thick films. Meanwhile, MOD provides us those advantages of low-cost, large-area deposition and good uniformity compared to PLD method, films with TCD-value about -0.3%/K have been developed by MOD and are being geared to fabricate arrays. Finally, the future direction towards prototyping ferroelectric arrays was formulated based on the practical view of our development expeditions.

引用

页码：140 / 151

页数：12

共 12 条

[1] Pyroelectric Ba0.8Sr0.2TiO3 thin films derived from a 0.05 M solution precursor by sol-gel processing [J].

Cheng, JG ;

Meng, XJ ;

Tang, J ;

Guo, SL ;

Chu, JH .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3402-3404

[2] NANOCRYSTALLINE BARIUM-TITANATE - EVIDENCE FOR THE ABSENCE OF FERROELECTRICITY IN SOL-GEL DERIVED THIN-LAYER CAPACITORS [J].

FREY, MH ;

PAYNE, DA .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2753-2755

[3]

HOFFMANN S, 1998, J PHYS 4 FRANCE, V8

[4]

Kruse P.W., 1997, UNCOOLED INFRARED IM, V47

[5] Microstructure and ferroelectric properties of fine-grained BaxSr1-xTiO3 thin films prepared by metalorganic decomposition [J].

Mohammed, MS ;

Naik, R ;

Mantese, JV ;

Schubring, NW ;

Micheli, AL ;

Catalan, AB .

JOURNAL OF MATERIALS RESEARCH, 1996, 11 (10) :2588-2593

[6]

NODA M, 1999, P SOC PHOTO-OPT INS, V3698, P365

[7] Sensitivity improvements in uncooled microbolometer FPAs [J].

Radford, W ;

Murphy, D ;

Finch, A ;

Hay, K ;

Kennedy, A ;

Ray, M ;

Sayed, A ;

Wyles, J ;

Wyles, R ;

Varesi, J ;

Moody, E ;

Cheung, F .

INFRARED TECHNOLOGY AND APPLICATIONS XXV, 1999, 3698 :119-130

[8]

WITTER DE, 1994, TI TECHNICAL J SEP, P19

[9]

XU H, 2000, IN PRESS VACUUM

[10]

XU H, 1999, TRANSDUCERS 99, V1, P398

← 1 2 →