Bandgap Effects in AlxGa1-x As Bragg Reflection Waveguides for Enhanced χ(2) Interactions

被引：0
|
作者：
Abolghasem, P. [1 ,2 ]
Bijlani, B. J. [1 ,2 ]
Burgoyne, B. [3 ]
Martek, P. [3 ]
Mercier, V. [3 ]
Villeneuve, A. [3 ]
Helmy, A. S. [1 ,2 ]
机构：
[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 3G4, Canada
[3] Genia Photon Inc, La Salle, PQ H8N 2J4, Canada
来源：
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY | 2010年
关键词：
SYSTEM; ALGAAS;
D O I：
10.1109/PHOTONICS.2010.5699031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Trade-offs associated with the efficiency of utilizing second-order nonlinearities in AlxGa1-x As Bragg reflection waveguides are examined theoretically and experimentally. Characterizations are carried out using 2 ps and 30 ps pulses with different pump power levels.
引用
收藏
页码：602 / +
页数：2
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