Enhanced visible-light absorption in heavily nitrogen-doped TiO2

被引：7

作者：

Li, Q. ^{[1
]}

Xue, J. ^{[2
]}

Liang, W. ^{[2
]}

Huang, J. -H. ^{[3
]}

Shang, J. K. ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Taiyuan Univ, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2008年 / 88卷 / 03期

基金：

美国国家科学基金会; 高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1080/09500830801894516

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heavy nitrogen doping of TiO2 thin films has been achieved by ion-beam-assisted deposition. The heavily doped films have a distorted anatase crystal structure and show an increase in visible-light absorption compared to films with only light nitrogen doping. The enhanced absorption is shown by a first-principles density-functional calculation to result from an electronic band-gap narrowing, in contrast to the appearance of isolated N 2p states above the valence-band maximum that occur with light nitrogen doping.

引用

页码：231 / 238

页数：8

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