Growth of GaN single crystals by Ca3N2 flux

被引：8

作者：

Wang, G. ^{[1
]}

Yuan, W. X. ^{[2
]}

Jian, J. K. ^{[3
]}

Bao, H. Q. ^{[1
]}

Wang, J. F. ^{[2
]}

Chen, X. L. ^{[1
]}

Liang, J. K. ^{[1
,4
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[2] Univ Sci & Technol Beijing, Dept Chem, Sch Appl Sci, Beijing 100083, Peoples R China

[3] Xinjiang Univ, Dept Phys, Urumqi 830046, Peoples R China

[4] Acad Sinica, Int Ctr Mat Phys, Shenyang 110016, Peoples R China

来源：

SCRIPTA MATERIALIA | 2008年 / 58卷 / 04期

基金：

中国国家自然科学基金;

关键词：

CALPHAD; single crystal growth; nitride;

D O I：

10.1016/j.scriptamat.2007.09.027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports recent progress on GaN single crystal growth by Ca3N2 flux. The isothermal phase diagrams of the Ca-Ga-N system were predicted from the corresponding binary systems by CALPHAD. Well-crystallized GaN crystals up to 1.5 mm were grown from the Ca-Ga-N system at 900 degrees C under 0.2 MPa N-2 pressure. It was found that the crystal size depended on the molar ratio of starting materials, the temperature and the duration of growth. A growth mechanism involving two-step reactions is proposed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：319 / 322

页数：4

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