Adsorption Site-Dependent Mobility Behavior in Graphene Exposed to Gas Oxygen

被引：7
作者：
Blechta, Vaclav [1 ,2 ]
Drogowska, Karolina A. [1 ]
Vales, Vaclav [1 ]
Kalbac, Martin [1 ]
机构：
[1] ASCR, J Heyrovsky Inst Phys Chem, Vvi, Dolejskova 2155-3, Prague 18223 8, Czech Republic
[2] Palacky Univ, Fac Sci, Dept Phys Chem, Tr 17 Listopadu 12, Olomouc 77146, Czech Republic
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2018年 / 122卷 / 37期
关键词：
FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; WALLED CARBON NANOTUBE; DOPED GRAPHENE; LAYER GRAPHENE; GROWN GRAPHENE; ENERGY SITES; LARGE-AREA; GRAPHITE; SUBSTRATE;
D O I：
10.1021/acs.jpcc.8b06906
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Transport characteristics of graphene field-effect transistors were measured in situ in oxygen/nitrogen atmospheres and at various temperatures. Mobilities of holes were extracted from transport characteristics as well as the doping level depending on the time of graphene exposure to oxygen/nitrogen atmosphere. The hole mobility showed significant decrease upon the oxygen adsorption to low energy adsorption sites (sp(2) carbon); however, it remained unaffected by the oxygen adsorption to high-energy adsorption sites which are represented by defects, impurities, transfer residuals, edges, and functional groups on graphene. The Dirac point was upshifted for both the low- and high-energy adsorption events. Activation energy of oxygen adsorption/desorption was estimated from temperature-dependent desorption rate coefficients as 215 and 450 meV for the low- and high-energy adsorption sites, respectively.
引用
收藏
页码：21493 / 21499
页数：7
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