Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

被引：2

作者：

Chang, Y. C. ^{[1
]}

Li, Y.-L.

Thomson, D. B.

Davis, R. F.

机构：

[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Inst Electro Opt Sci & Engn, Tainan 701, Taiwan

[2] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 106, Taiwan

[3] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.2767239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phonon-assisted stimulated emission has been demonstrated by photopumping GaN stripes grown via pendeoepitaxy on 6H-SiC (0001) substrates. Transverse-electric-polarized emission with well-defined Fabry-Perot modes located at one longitudinal optical phonon energy (90 meV) below the band gap of GaN was observed at 77 K. An effective refractive index of 8.578 was obtained using a cavity length of 13.3 mu m and a mode spacing of 0.6 nm. This value is significantly higher than the value previously reported in the literature using ellipsometry, which indicates that the absorption loss is more severe during lasing when the excess carrier concentration is very high. (c) 2007 American Institute of Physics.

引用

页数：3

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