Semiconductor-half metal transition at the Fe3O4(001) surface upon hydrogen adsorption

被引：89

作者：

Parkinson, Gareth S. ^{[1
,2
]}

Mulakaluri, Narasimham ^{[3
,4
]}

Losovyj, Yaroslav ^{[5
]}

Jacobson, Peter ^{[1
,2
]}

Pentcheva, Rossitza ^{[3
]}

Diebold, Ulrike ^{[1
,2
]}

机构：

[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA

[2] Vienna Univ Technol, Inst Appl Phys, A-1040 Vienna, Austria

[3] Univ Munich, Dept Earth & Environm Sci, D-80333 Munich, Germany

[4] Fritz Haber Inst Max Planck Gesell, D-14195 Berlin, Germany

[5] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70806 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 12期

基金：

美国国家科学基金会;

关键词：

VERWEY TRANSITION; ELECTRONIC-STRUCTURE; PHOTOEMISSION; MAGNETITE; STATES; SPECTROSCOPY; SPECTRA;

D O I：

10.1103/PhysRevB.82.125413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The adsorption of H on the magnetite (001) surface was studied with photoemission spectroscopies, scanning tunneling microscopy, and density-functional theory. At saturation coverage the insulating (root 2 x root 2)R45 degrees reconstruction is lifted and the surface undergoes a semiconductor-half metal transition. This transition involves subtle changes in the local geometric structure linked to an enrichment of Fe2+ cations at the surface. The ability to manipulate the electronic properties by surface engineering has important implications for magnetite-based spintronic devices.

引用

页数：5

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