Semiconductor-half metal transition at the Fe3O4(001) surface upon hydrogen adsorption

被引：89
|
作者：
Parkinson, Gareth S. [1 ,2 ]
Mulakaluri, Narasimham [3 ,4 ]
Losovyj, Yaroslav [5 ]
Jacobson, Peter [1 ,2 ]
Pentcheva, Rossitza [3 ]
Diebold, Ulrike [1 ,2 ]
机构：
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
[2] Vienna Univ Technol, Inst Appl Phys, A-1040 Vienna, Austria
[3] Univ Munich, Dept Earth & Environm Sci, D-80333 Munich, Germany
[4] Fritz Haber Inst Max Planck Gesell, D-14195 Berlin, Germany
[5] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70806 USA
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 12期
基金：
美国国家科学基金会;
关键词：
VERWEY TRANSITION; ELECTRONIC-STRUCTURE; PHOTOEMISSION; MAGNETITE; STATES; SPECTROSCOPY; SPECTRA;
D O I：
10.1103/PhysRevB.82.125413
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The adsorption of H on the magnetite (001) surface was studied with photoemission spectroscopies, scanning tunneling microscopy, and density-functional theory. At saturation coverage the insulating (root 2 x root 2)R45 degrees reconstruction is lifted and the surface undergoes a semiconductor-half metal transition. This transition involves subtle changes in the local geometric structure linked to an enrichment of Fe2+ cations at the surface. The ability to manipulate the electronic properties by surface engineering has important implications for magnetite-based spintronic devices.
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页数：5
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