Atomic and electronic structure of diamond grain boundaries analyzed by HRTEM and EELS

被引:33
作者
Ichinose, H
Nakanose, M
机构
[1] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 113, Japan
[2] Nissan Motor Co Ltd, Space Syst Dept, Aerosp Div, Suginami Ku, Tokyo 167, Japan
关键词
atomic structure; electronic structure; diamond polycrystalline film;
D O I
10.1016/S0040-6090(97)01092-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) were performed on grain boundaries of an artificial diamond film to examine the correlation between their atomic and electronic structures. Characteristic grain boundary structures that were different from the other covalent bonding materials were shown in Sigma 3 CLS and Sigma 9 CLS boundaries: (112) Sigma 3 boundaries were symmetrical in atomic arrangement and Sigma 9 boundaries were parallel to the (114) plane, although 'dangling' bonds were supposed to be present in it. A new line that corresponds to the pi* state was found in addition to a major sigma* line in the EELS spectra of both (112) Sigma 3 and (114) Sigma 9 boundaries. The new pi* line suggests that there is pi bonding in both boundaries instead of the dangling bond. Reconstruction of a dangling bond into the pi state may stabilize the diamond grain boundary. (C) 1998 Published by Elsevier Science S.A.
引用
收藏
页码:87 / 91
页数:5
相关论文
共 50 条
  • [31] Electronic structure of diamond-like carbon
    Robertson, J
    DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) : 212 - 218
  • [32] Atomic structure of fivefold twin center in diamond film
    Sawada, H
    Ichinose, H
    DIAMOND AND RELATED MATERIALS, 2005, 14 (01) : 109 - 112
  • [33] Theoretical modeling of the structure of tilt grain boundaries in crystalline silicon
    Lazebnych, V. Yu.
    Mysovsky, A. S.
    PHYSICS OF THE SOLID STATE, 2012, 54 (12) : 2357 - 2361
  • [34] Electronic structure of YFe2 by EELS and ab-initio calculations
    Yanez-Terrazas, E.
    Gallegos-Orozco, V.
    Matutes-Aquino, J. A.
    Ochoa-Lara, M. T.
    Espinosa-Magana, F.
    ADVANCES IN SEMICONDUCTING MATERIALS, 2009, 68 : 89 - 95
  • [35] Electronic and atomic structure computation of disordered low index surfaces of γ-alumina
    Dyan, Anthony
    Azevedo, Christophe
    Cenedese, Pierre
    Dubot, Pierre
    APPLIED SURFACE SCIENCE, 2008, 254 (13) : 3819 - 3828
  • [36] Atomic structure and energy of triple junctions of tilt boundaries in nickel
    Poletaev, G. M.
    Dmitrienko, D. V.
    Diabdenkov, V. V.
    Mikrukov, V. R.
    Starostenkov, M. D.
    LETTERS ON MATERIALS-PIS MA O MATERIALAKH, 2013, 3 (02): : 72 - 75
  • [37] Grain boundary sliding and atomic structure in alumina bicrystal
    Watanabe, T
    Yoshida, H
    Ikuhara, Y
    Sakuma, T
    Muto, H
    Sakai, M
    PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II, 2001, : 749 - 752
  • [38] Atomic and Electronic Structure at Au/CdSe Interfaces
    de Paiva, R.
    Di Felice, Rosa
    ACS NANO, 2008, 2 (11) : 2225 - 2236
  • [39] Effects of a vacancy, Cr and Mo on the electronic structure of FeAlΣ3 (10(1)over-bar) [111] grain boundaries
    Chen Yu
    Yao Zheng-Jun
    Zhang Ping-Ze
    Luo Xi-Xi
    MATERIALS RESEARCH EXPRESS, 2019, 6 (02)
  • [40] Atomic and Electronic Structure of a Multidomain GeTe Crystal
    Frolov, Alexander S.
    Sanchez-Barriga, Jaime
    Callaert, Carolien
    Hadermann, Joke
    Fedorov, Alexander, V
    Usachov, Dmitry Yu
    Chaika, Alexander N.
    Walls, Brian C.
    Zhussupbekov, Kuanysh
    Shvets, Igor, V
    Muntwiler, Matthias
    Amati, Matteo
    Gregoratti, Luca
    Varykhalov, Andrei Yu
    Rader, Oliver
    Yashina, Lada, V
    ACS NANO, 2020, 14 (12) : 16576 - 16589