X-ray absorption at Ge L3 edges as a tool to investigate Ge/Si(001) interfaces and heterostructures

被引：7

作者：

Castrucci, P

Gunnella, R

De Crescenzi, M

Sacchi, M

Dufour, G

Rochet, F

机构：

[1] Univ Camerino, Dipartimento Matemat & Fis, Sez INFN, I-62032 Camerino, MC, Italy

[2] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France

[3] Univ Pierre & Marie Curie, Chim Phys Lab, F-75151 Paris, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.589949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Ge L-3 edge x-ray absorption spectra of a series of Ge/Si heterostructures grown on Si(001) substrates were investigated using linearly polarized synchrotron radiation. By making use of a multiple scattering approach we reproduced the experimental spectra for different structural models and several degrees of strain and intermixing. Evidences of interfacial intermixing processes were found even at room temperature. Such an intermixing is strongly inhibited by Sb assisted growth. (C) 1998 American Vacuum Society.

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页码：1616 / 1620

页数：5

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