Spin-transfer torque RAM technology: Review and prospect

被引：256
作者：
Kawahara, T. [1 ]
Ito, K. [1 ]
Takemura, R. [1 ]
Ohno, H. [2 ,3 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
[2] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 04期
基金：
日本学术振兴会;
关键词：
MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; MAGNETORESISTANCE; REVERSAL;
D O I：
10.1016/j.microrel.2011.09.028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces power consumption. One of the most promising candidates for NV-RAM technology is the spin-transfer torque RAM (SPRAM) based on magnetic tunnel junction (MTJ) device technology. This paper reviews the development of MTJ device technology and formulates considerations regarding its memory application, including SPRAM memory cell structure and operation, write voltage limitation, and thermal stability. At the circuit level, a disruptive read operation for future large integration scale is described. A 4F(2) memory cell and a multi-bit cell approach are also presented. Finally, the potential value of instant-on/off computing through NV-RAM and its impact are explored. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：613 / 627
页数：15
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