Ultrafast Exciton Dynamics in InGaN/GaN and Rh/Cr2O3 Nanoparticle-Decorated InGaN/GaN Nanowires

被引：46

作者：

Pu, Ying-Chih ^{[1
]}

Kibria, M. G. ^{[2
]}

Mi, Zetian ^{[2
]}

Zhang, Jin Z. ^{[1
]}

机构：

[1] Univ Calif Santa Cruz, Dept Chem & Biochem, Santa Cruz, CA 95064 USA

[2] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 0E9, Canada

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2015年 / 6卷 / 13期

基金：

加拿大自然科学与工程研究理事会;

关键词：

CARRIER DYNAMICS; TIO2; NANOWIRES; RECOMBINATION DYNAMICS; HYDROGEN GENERATION; FERMI-LEVEL; WATER; FEMTOSECOND; BAND; HETEROSTRUCTURES; EFFICIENT;

D O I：

10.1021/acs.jpclett.5b00909

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultrafast exciton and charge-carrier dynamics in InGaN/GaN nanowires (NWs) with and without Rh/Cr2O3 nanoparticle (NP) decoration have been investigated using femtosecond transient absorption (TA) techniques with excitation at 415 nm and white-light probe (450-700 nm). By comparing the TA profiles between InGaN/GaN and InGaN/GaN-Rh/Cr2O3 NWs, an additional decay component on the medium time scale (similar to 50 ps) was identified with Rh/Cr2O3 decoration, which is attributed to interfacial charge transfer from InGaN/GaN NWs to Rh/Cr2O3 NPs, desired for light energy conversion applications. This is consistent with reduced photoluminescence (PL) of the NWs by the Rh/Cr2O3 NPs. A kinetic model was developed to explain the TA results and gain further insight into the exciton and charge-carrier dynamics.

引用

页码：2649 / 2656

页数：8

共 63 条

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