Investigation of the geometric and electronic structures of ErSi(2-x) with the density functional theory and comparison with STM images

被引:6
作者
Duverger, E [1 ]
Palmino, F [1 ]
Ehret, E [1 ]
Labrune, JC [1 ]
机构
[1] Univ Franche Comte, Inst FEMTO ST, Dpt CREST, CNRS,UMR 6174, F-25211 Montbeliard, France
关键词
erbium; silicon surface; STM; Wien2k simulation; interface; density functional theory;
D O I
10.1016/j.susc.2005.07.036
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Study of ErSi(2-x) surfaces system is submitted at one controversy in reason of the STM images bias voltage dependence. In this article, we have investigated by means of calculations issued of the density functional theory (DFT), atomic surface density for 2D and 3D epitaxial erbium silicide on Si(1 11). DOS (density of state) in front of the surface, calculated with Wien2k, permits to simulate scanning tunneling microscopy (STM) images in function of the bias voltage and to discriminate the different surface arrangements. The calculations confirm the model of structure accepted and give some new elements in order to close the controversy on the question. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:40 / 48
页数:9
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