Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes

被引：23

作者：

Sasikumar, K. ^{[1
]}

Bharathikannan, R. ^{[2
]}

Raja, M. ^{[3
]}

机构：

[1] Sri Ramakrishna Engn Coll, Dept Phys, Coimbatore, Tamil Nadu, India

[2] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore, Tamil Nadu, India

[3] RVS Coll Engn & Technol, Dept Phys, Coimbatore, Tamil Nadu, India

来源：

SILICON | 2019年 / 11卷 / 01期

关键词：

XRD analysis; J-V characteristics; Barrier height; Insulating layer; ZrO2; THIN-FILMS; OPTICAL-PROPERTIES; GATE DIELECTRICS; ZRO2; SI; PERFORMANCE; PARAMETERS; DEPOSITION; INTERLAYER;

D O I：

10.1007/s12633-018-9938-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structural and electrical properties of Al/ZrO2/p-Si Schottky barrier diodes (SBDs) have been investigated at different annealing temperatures (300, 400, 500 and 600 degrees C). X-ray diffraction (XRD) analysis shows that the film annealed at 600 degrees C exhibits better crystalline nature with monoclinic phase. X-ray photoelectron spectroscopy (XPS) analysis reveals that the oxidation state of ZrO2 film is Zr4+. The scanning electron microscopy (SEM) image shows that the film annealed at 600 degrees C exhibits sub-micro-sized and square-shaped grains. The thermionic emission (TE) model determines the diode parameters such as barrier height (phi(B)), ideality factor (n), series resistance (R-s) and saturation current density (J(s)) from J-V characteristics and Cheung's method. The ideality factor of the Al/ZrO2/p-Si diodes decreases (3.772-3.442) with increasing annealing temperature (300-600 degrees C).

引用

页码：137 / 143

页数：7

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