Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes

被引：26
作者：
Sasikumar, K. [1 ]
Bharathikannan, R. [2 ]
Raja, M. [3 ]
机构：
[1] Sri Ramakrishna Engn Coll, Dept Phys, Coimbatore, Tamil Nadu, India
[2] Sri Ramakrishna Mission Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore, Tamil Nadu, India
[3] RVS Coll Engn & Technol, Dept Phys, Coimbatore, Tamil Nadu, India
来源：
SILICON | 2019年 / 11卷 / 01期
关键词：
XRD analysis; J-V characteristics; Barrier height; Insulating layer; ZrO2; THIN-FILMS; OPTICAL-PROPERTIES; GATE DIELECTRICS; ZRO2; SI; PERFORMANCE; PARAMETERS; DEPOSITION; INTERLAYER;
D O I：
10.1007/s12633-018-9938-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The structural and electrical properties of Al/ZrO2/p-Si Schottky barrier diodes (SBDs) have been investigated at different annealing temperatures (300, 400, 500 and 600 degrees C). X-ray diffraction (XRD) analysis shows that the film annealed at 600 degrees C exhibits better crystalline nature with monoclinic phase. X-ray photoelectron spectroscopy (XPS) analysis reveals that the oxidation state of ZrO2 film is Zr4+. The scanning electron microscopy (SEM) image shows that the film annealed at 600 degrees C exhibits sub-micro-sized and square-shaped grains. The thermionic emission (TE) model determines the diode parameters such as barrier height (phi(B)), ideality factor (n), series resistance (R-s) and saturation current density (J(s)) from J-V characteristics and Cheung's method. The ideality factor of the Al/ZrO2/p-Si diodes decreases (3.772-3.442) with increasing annealing temperature (300-600 degrees C).
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页码：137 / 143
页数：7
相关论文
共 34 条
[1]   Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts [J].
Agrawal, Ashish ;
Lin, Joyce ;
Barth, Michael ;
White, Ryan ;
Zheng, Bo ;
Chopra, Saurabh ;
Gupta, Shashank ;
Wang, Ke ;
Gelatos, Jerry ;
Mohney, Suzanne E. ;
Datta, Suman .
APPLIED PHYSICS LETTERS, 2014, 104 (11)
[2]   Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode [J].
Balaram, N. ;
Reddy, M. Siva Pratap ;
Reddy, V. Rajagopal ;
Park, Chinho .
THIN SOLID FILMS, 2016, 619 :231-238
[3]   ZrO2 thin films with controllable morphology and thickness by spin-coated sol-gel method [J].
Chang, SM ;
Doong, RA .
THIN SOLID FILMS, 2005, 489 (1-2) :17-22
[4]   EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].
CHEUNG, SK ;
CHEUNG, NW .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87
[5]   Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts [J].
Ejderha, K. ;
Zengin, A. ;
Orak, I. ;
Tasyurek, B. ;
Kilinc, T. ;
Turut, A. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 14 (01) :5-12
[6]   ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates [J].
Frenzel, H. ;
Lajn, A. ;
Brandt, M. ;
von Wenckstern, H. ;
Biehne, G. ;
Hochmuth, H. ;
Lorenz, M. ;
Grundmann, M. .
APPLIED PHYSICS LETTERS, 2008, 92 (19)
[7]   Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers [J].
Gajula, D. R. ;
Baine, P. ;
Modreanu, M. ;
Hurley, P. K. ;
Armstrong, B. M. ;
McNeill, D. W. .
APPLIED PHYSICS LETTERS, 2014, 104 (01)
[8]   Room-temperature preparation of ZrO2 precursor thin film in an aqueous peroxozirconium-complex solution [J].
Gao, YF ;
Masuda, Y ;
Ohta, H ;
Koumoto, K .
CHEMISTRY OF MATERIALS, 2004, 16 (13) :2615-2622
[9]   Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics [J].
Henkel, C. ;
Abermann, S. ;
Bethge, O. ;
Pozzovivo, G. ;
Klang, P. ;
Stoeger-Pollach, M. ;
Bertagnolli, E. .
MICROELECTRONIC ENGINEERING, 2011, 88 (03) :262-267
[10]   Effects of postannealing on the bulk and interfacial characteristics of ZrO2 gate dielectrics prepared on Si by metalorganic chemical vapor deposition [J].
Huang, SS ;
Wu, TB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06) :2702-2708
1234