Vertically Architectured Stack of Multiple Graphene Field-Effect Transistors for Flexible Electronics

被引：10
|
作者：
Meng, Jie [1 ,2 ]
Chen, Jing-Jing [1 ,2 ]
Zhang, Liang [1 ,2 ]
Bie, Ya-Qing [1 ,2 ]
Liao, Zhi-Min [1 ,2 ]
Yu, Da-Peng [1 ,2 ]
机构：
[1] Peking Univ, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China
来源：
SMALL | 2015年 / 11卷 / 14期
关键词：
graphene FETs; vertical stack; flexible electronics; PMMA gate dielectric; THIN-FILM TRANSISTORS; SEMICONDUCTOR NANOWIRES; TRANSPARENT ELECTRODES; GATE DIELECTRICS; HETEROSTRUCTURES; INVERTERS; DEVICES; MEMORY; LAYER;
D O I：
10.1002/smll.201402422
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Vertically architectured stack of multiple graphene field-effect transistors (GFETs) on a flexible substrate show great mechanical flexibility and robustness. The four GFETs are integrated in the vertical direction, and dually gated GFETs with graphene channel, PMMA dielectrics, and graphene gate electrodes are realized. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1660 / 1664
页数：5
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