Formation of aluminium oxide film on Al substrate by micro-arc-technology in electrolytic solution of sodium hydroxide systems

被引:5
作者
Takahashi, N [1 ]
Funasaka, H [1 ]
Shimizu, T [1 ]
机构
[1] Chiba Inst Technol, Fac Engn, Narashino, Chiba 2750016, Japan
关键词
micro-arc; surface processing; electrolytic solution; Al2O3; film; bilayer structure;
D O I
10.2109/jcersj.113.429
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The objective of this study was to form a polycrystalline oxide film on Al substrate using micro-arc-technology. According to the kind of electrolytic solution used micro-arc-processing was either possible or not. A crystallized Al2O3 film on the Al substrate was formed by micro-arc-processing in a NaOH electrolytic solution. But the discharge dispersion happened due to the condition of pretreatment on the Al substrate. This discharge dispersion did not occur in the mixed electrolytic solution of NaOH and Na2SiO3, and a crystallized Al2O3 film was formed on the Al substrate when it stabilized. In addition, the film had a bilayer structure with the under-layer near the Al substrates made of the high-density principal component gamma-Al2O3 and alpha-Al2O3. The upper layer was made of gamma-Al2O3 in the porous phase.
引用
收藏
页码:429 / 434
页数:6
相关论文
共 35 条
  • [1] [Anonymous], J MET FINISH SOC JPN
  • [2] [Anonymous], 1999, J SURF FINISH SOC JP
  • [3] ASOH H, 2004, KOGAKUIN DAIGAKU KEN, V96, P29
  • [4] BABA N, 1996, DENKAI HOU NIYORU SA, P13
  • [5] EBIHARA K, 1982, J MET FINISH SOC JPN, V33, P4
  • [6] FUKUOKA K, 1996, SUMITOMO LIGHT METAL, V37, P126
  • [7] GOTO M, 2003, GUNMA KENRITSU SANGY, P47
  • [8] HABAZAKI H, 1998, J SURF FINISH SOC JP, V49, P854
  • [9] HABAZAKI H, 1998, J SURF SCI SOC JAPAN, V19, P772
  • [10] HIROCHI M, 1982, J METAL FINISHING SO, V33, P206