IR transmittance of CdTe after high-temperature annealing

被引：3

作者：

Bugar, Marek ^{[1
]}

Belas, Eduard ^{[1
]}

Prochazka, Jan ^{[1
]}

Hlidek, Pavel ^{[1
]}

Grill, Roman ^{[1
]}

Franc, Jan ^{[1
]}

Hoeschl, Pavel ^{[1
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Inst Phys, CR-12116 Prague 2, Czech Republic

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 633卷

关键词：

IR transmittance; Free carrier absorption; Precipitates; CdTe; CRYSTALS; PRECIPITATION; ABSORPTION;

D O I：

10.1016/j.nima.2010.06.130

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Infrared transmittance and electrical properties of undoped and In-doped CdTe single crystals were investigated before and after post-growth annealing at high temperature followed by various cooling regimes. Typical free carrier absorption was found in the IR transmittance spectra at low energies. Non-standard absorption behavior was observed in the range 0.8-1.5 eV in samples, which were quenched in the air after annealing. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S83 / S85

页数：3

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