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Semi-transparent organic/inorganic hybrid photo-detector using pentacene/ZnO diode connected to pentacene transistor
被引:32
作者:

Lee, Kwang H.
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Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Park, Chan Ho
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Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Lee, Kimoon
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Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Ha, Taewoo
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Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Kim, Jae Hoon
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Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Yun, Jungheum
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机构:
Korea Inst Mat Sci, Dept Surface Technol, Chang Won 641831, Gyeongnam, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Lee, Gun-Hwan
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Korea Inst Mat Sci, Dept Surface Technol, Chang Won 641831, Gyeongnam, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

Im, Seongil
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Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
机构:
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Korea Inst Mat Sci, Dept Surface Technol, Chang Won 641831, Gyeongnam, South Korea
[3] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词:
Photodiode;
ZnO;
Pentacene;
Semi-transparent;
Thin-film transistor;
THIN-FILM TRANSISTORS;
TRANSPARENT;
GATE;
D O I:
10.1016/j.orgel.2011.03.025
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Semi-transparent organic-inorganic hybrid photo-detector cells were fabricated on glass substrate, composed of pentacene/ZnO photodiodes and pentacene thin-film transistors (TFTs). Semi-transparent NiOx window with a large band gap of similar to 4 eV was used as an ohmic electrode on 50 nm-thin pentacene channel in the TFT and simultaneously on the 150 nm-thick pentacene layer, which is deposited on ZnO for p-n diode, to absorb visible and ultraviolet photons from pentacene and ZnO, respectively. Our photo-detector exhibited a minimum temporal response of similar to 300 ms for photo-induced output voltage at -1 V input and -3 V supply voltage. (C) 2011 Elsevier B.V. All rights reserved.
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页码:1103 / 1107
页数:5
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