Semi-transparent organic/inorganic hybrid photo-detector using pentacene/ZnO diode connected to pentacene transistor

被引:32
作者
Lee, Kwang H. [1 ]
Park, Chan Ho [1 ]
Lee, Kimoon [3 ]
Ha, Taewoo [1 ]
Kim, Jae Hoon [1 ]
Yun, Jungheum [2 ]
Lee, Gun-Hwan [2 ]
Im, Seongil [1 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Korea Inst Mat Sci, Dept Surface Technol, Chang Won 641831, Gyeongnam, South Korea
[3] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
Photodiode; ZnO; Pentacene; Semi-transparent; Thin-film transistor; THIN-FILM TRANSISTORS; TRANSPARENT; GATE;
D O I
10.1016/j.orgel.2011.03.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semi-transparent organic-inorganic hybrid photo-detector cells were fabricated on glass substrate, composed of pentacene/ZnO photodiodes and pentacene thin-film transistors (TFTs). Semi-transparent NiOx window with a large band gap of similar to 4 eV was used as an ohmic electrode on 50 nm-thin pentacene channel in the TFT and simultaneously on the 150 nm-thick pentacene layer, which is deposited on ZnO for p-n diode, to absorb visible and ultraviolet photons from pentacene and ZnO, respectively. Our photo-detector exhibited a minimum temporal response of similar to 300 ms for photo-induced output voltage at -1 V input and -3 V supply voltage. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1103 / 1107
页数:5
相关论文
共 14 条
[1]   Stacked Image Sensor With Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc Oxide Thin-Film Transistors to a Signal Readout Circuit [J].
Aihara, Satoshi ;
Seo, Hokuto ;
Namba, Masakazu ;
Watabe, Toshihisa ;
Ohtake, Hiroshi ;
Kubota, Misao ;
Egami, Norifumi ;
Hiramatsu, Takahiro ;
Matsuda, Tokiyoshi ;
Furuta, Mamoru ;
Nitta, Hiroshi ;
Hirao, Takashi .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (11) :2570-2576
[2]   Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions [J].
Bae, H. S. ;
Im, Seongil ;
Song, J. H. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (09) :G791-G794
[3]   LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE [J].
BETHKE, S ;
PAN, H ;
WESSELS, BW .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :138-140
[4]   Comparative study of the photoresponse from tetracene-based and pentacene-based thin-film transistors [J].
Choi, JM ;
Lee, J ;
Hwang, DK ;
Kim, JH ;
Im, S ;
Kim, E .
APPLIED PHYSICS LETTERS, 2006, 88 (04) :1-3
[5]   Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes -: art. no. 123505 [J].
Choi, JM ;
Hwang, DK ;
Kim, JH ;
Im, S .
APPLIED PHYSICS LETTERS, 2005, 86 (12) :1-3
[6]   Fully transparent ZnO thin-film transistor produced at room temperature [J].
Fortunato, EMC ;
Barquinha, PMC ;
Pimentel, ACMBG ;
Gonçalves, AMF ;
Marques, AJS ;
Pereira, LMN ;
Martins, RFP .
ADVANCED MATERIALS, 2005, 17 (05) :590-+
[7]   Polymer/YOx hybrid-sandwich gate dielectrics for semitransparent pentacene thin-film transistors operating under 5 V [J].
Hwang, Do Kyung ;
Kim, Chang Su ;
Choi, Jeong Min ;
Lee, Kimoon ;
Park, Ji Hoon ;
Kim, Eugene ;
Baik, Hong Koo ;
Kim, Jae Hoon ;
Im, Seongil .
ADVANCED MATERIALS, 2006, 18 (17) :2299-+
[8]   Correlation between photoelectric and optical absorption spectra of thermally evaporated pentacene films [J].
Lee, J ;
Kim, SS ;
Kim, K ;
Kim, JH ;
Im, S .
APPLIED PHYSICS LETTERS, 2004, 84 (10) :1701-1703
[9]   Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric [J].
Lee, K ;
Kim, JH ;
Im, S .
APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3
[10]   Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].
Nomura, K ;
Ohta, H ;
Takagi, A ;
Kamiya, T ;
Hirano, M ;
Hosono, H .
NATURE, 2004, 432 (7016) :488-492