High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

被引：1

作者：

Hallin, C ^{[1
]}

Kakanakova-Georgieva, A ^{[1
]}

Persson, P ^{[1
]}

Janzén, E ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461615

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin epitaxial AlN-layers were grown on 6H-SiC (0001) substrates in a hot-wall MOCVD. Three different substrate surfaces were used: (1) high quality 6H-SiC homoepitaxial layer, (2) H2-etched, and (3) as-received surfaces. High resolution rocking curve (omega-scan) measurements of the (0002) reflection show low values (FMHW) for AlN grown on (1), 15 arcsec, and for AlN grown on (2), 25 arcsec. For AlN grown on the as-received substrate this value was > 100 arcsec. Plan view transmission electron microscope and atomic force microscope images show larger grains and less surface roughness of the AlN-layer grown on the SiC epitaxial surface compared with the other substrate surfaces. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2109 / 2112

页数：4

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