Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

被引：114

作者：

Uccelli, Emanuele ^{[1
]}

Arbiol, Jordi ^{[2
,3
]}

Magen, Cesar ^{[4
,5
]}

Krogstrup, Peter ^{[6
]}

Russo-Averchi, Eleonora ^{[1
]}

Heiss, Martin ^{[1
]}

Mugny, Gabriel ^{[1
]}

Morier-Genoud, Francois ^{[7
]}

Nygard, Jesper ^{[6
]}

Ramon Morante, Joan ^{[8
,9
]}

Fontcuberta i Morral, Anna ^{[1
,3
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[2] ICMAB CSIC, ICREA, E-08193 Bellaterra, Catalonia, Spain

[3] ICMAB CSIC, Inst Ciencia Mat Barcelona, E-08193 Bellaterra, Catalonia, Spain

[4] Univ Zaragoza, Inst Nanociencia Aragon ARAID, Zaragoza 50018, Spain

[5] Univ Zaragoza, Dept Fis Mat Condensada, Zaragoza 50018, Spain

[6] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[7] Ecole Polytech Fed Lausanne, Lab Optoelect Quant, CH-1015 Lausanne, Switzerland

[8] IREC, Catalonia Inst Energy Res, St Adria Del Besos 08930, Spain

[9] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

来源：

NANO LETTERS | 2011年 / 11卷 / 09期

关键词：

Nanowires; three-dimensional twinning; nanowire growth mechanisms; III-V on silicon; epitaxy; polarity; III-V NANOWIRES; EPITAXIAL-GROWTH;

D O I：

10.1021/nl201902w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.

引用

页码：3827 / 3832

页数：6

共 33 条

[1] Epitaxial growth of InP nanowires on germanium [J].

Bakkers, EPAM ;

Van Dam, JA ;

De Franceschi, S ;

Kouwenhoven, LP ;

Kaiser, M ;

Verheijen, M ;

Wondergem, H ;

Van der Sluis, P .

NATURE MATERIALS, 2004, 3 (11) :769-773

[2] Optical properties of rotationally twinned InP nanowire heterostructures [J].

Bao, Jiming ;

Bell, David C. ;

Capasso, Federico ;

Wagner, Jakob B. ;

Martensson, Thomas ;

Tragardh, Johanna ;

Samuelson, Lars .

NANO LETTERS, 2008, 8 (03) :836-841

[3] The interpretation of HREM images of supported metal catalysts using image simulation:: profile view images [J].

Bernal, S ;

Botana, FJ ;

Calvino, JJ ;

López-Cartes, C ;

Pérez-Omil, JA ;

Rodríguez-Izquierdo, JM .

ULTRAMICROSCOPY, 1998, 72 (3-4) :135-164

[4] Si-InAs heterojunction Esaki tunnel diodes with high current densities [J].

Bjork, M. T. ;

Schmid, H. ;

Bessire, C. D. ;

Moselund, K. E. ;

Ghoneim, H. ;

Karg, S. ;

Lortscher, E. ;

Riel, H. .

APPLIED PHYSICS LETTERS, 2010, 97 (16)

[5] Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes [J].

Boettcher, Shannon W. ;

Spurgeon, Joshua M. ;

Putnam, Morgan C. ;

Warren, Emily L. ;

Turner-Evans, Daniel B. ;

Kelzenberg, Michael D. ;

Maiolo, James R. ;

Atwater, Harry A. ;

Lewis, Nathan S. .

SCIENCE, 2010, 327 (5962) :185-187

[6]

Chen R, 2011, NAT PHOTONICS, V5, P170, DOI [10.1038/nphoton.2010.315, 10.1038/NPHOTON.2010.315]

[7] Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].

Chuang, Linus C. ;

Moewe, Michael ;

Chase, Chris ;

Kobayashi, Nobuhiko P. ;

Chang-Hasnain, Connie ;

Crankshaw, Shanna .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[8] Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates [J].

Cirlin, G. E. ;

Dubrovskii, V. G. ;

Soshnikov, I. P. ;

Sibirev, N. V. ;

Samsonenko, Yu. B. ;

Bouravleuv, A. D. ;

Harmand, J. C. ;

Glas, F. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04) :112-114

[9] Characterization of the absolute crystal polarity across twin boundaries in gallium phosphide using convergent-beam electron diffraction [J].

Cohen, D ;

McKernan, S ;

Carter, CB .

MICROSCOPY AND MICROANALYSIS, 1999, 5 (03) :173-186

[10] Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy [J].

Colombo, C. ;

Spirkoska, D. ;

Frimmer, M. ;

Abstreiter, G. ;

Morral, A. Fontcuberta I. .

PHYSICAL REVIEW B, 2008, 77 (15)

← 1 2 3 4 →