Compositional dependence of nonpolar m-plane InxGa1-xN/GaN light emitting diodes

被引：1
作者：
Yamada, Hisashi [1 ]
Iso, Kenji [1 ]
Saito, Makoto [1 ]
Masui, Hisashi [1 ]
Fujito, Kenji [2 ]
DenBaars, Steven P. [1 ]
Nakamura, Shuji [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Mitsubishi Chem Co Ltd, Optoelect Lab, Ibaraki 3001295, Japan
来源：
APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 04期
关键词：
D O I：
10.1143/APEX.1.041101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Characteristics of m-plane InGaN/GaN light emitting diodes (LEDs) with various indium compositions were investigated. X-ray diffraction revealed that indium compositions in the InGaN multi quantum wells (MQWs) on m-plane substrate were 2-3 times lower than those on c-plane substrate. The optical polarization ratio for m-plane LEDs increased from 0.27 to 0.89 with increasing emission wavelength from 383 to 476 nm due to compressively strained InGaN QWs. The output power of electroluminescence decreased above 400 nm although polarization-related internal electric fields were eliminated. (C) 2008 The Japan Society of Applied Physics.
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页码：0411011 / 0411013
页数：3
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