Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions

被引:23
|
作者
Nishikawa, Masami [2 ]
Nakajima, Tomohiko [1 ]
Kumagai, Toshiya [1 ]
Okutani, Takeshi [2 ]
Tsuchiya, Tetsuo [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
[2] Yokohama Natl Univ, Sch Environm & Informat Sci, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan
关键词
VO2; Epitaxial film; Metal-insulator transition; Hysteresis; TCR; THIN-FILMS; INSULATOR-TRANSITION; ORGANIC DEPOSITION; VANADIUM DIOXIDE; TEMPERATURE; DETECTORS;
D O I
10.2109/jcersj2.119.577
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thermal hysteresises of electrical resistance, accompanying with a structural phase transition, in epitaxial VO2 films have been successfully reduced to 1 degrees C or less by doping Ti or Nb ions. We considered that owing to the metal-ion-substitutive structural defects induced by doping metal ions into VO2 films, the structural phase transition easily occurred without superheating or supercooling. In Nb-doped VO2 films, the hysteresis disappeared at a lower doping level than Ti-doped VO2 films. The maximum values of the temperature coefficient of the resistance of V0.91Ti0.09O2 and V0.982Nb0.018O2 films, which exhibited non-hysteretic MI transitions, were -24.8%/degrees C at 46 degrees C and -21.6%/degrees C at 19 degrees C, respectively. (C)2011 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码:577 / 580
页数:4
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