Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions

被引：23

作者：

Nishikawa, Masami ^{[2
]}

Nakajima, Tomohiko ^{[1
]}

Kumagai, Toshiya ^{[1
]}

Okutani, Takeshi ^{[2
]}

Tsuchiya, Tetsuo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

[2] Yokohama Natl Univ, Sch Environm & Informat Sci, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2011年 / 119卷 / 1391期

关键词：

VO2; Epitaxial film; Metal-insulator transition; Hysteresis; TCR; THIN-FILMS; INSULATOR-TRANSITION; ORGANIC DEPOSITION; VANADIUM DIOXIDE; TEMPERATURE; DETECTORS;

D O I：

10.2109/jcersj2.119.577

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thermal hysteresises of electrical resistance, accompanying with a structural phase transition, in epitaxial VO2 films have been successfully reduced to 1 degrees C or less by doping Ti or Nb ions. We considered that owing to the metal-ion-substitutive structural defects induced by doping metal ions into VO2 films, the structural phase transition easily occurred without superheating or supercooling. In Nb-doped VO2 films, the hysteresis disappeared at a lower doping level than Ti-doped VO2 films. The maximum values of the temperature coefficient of the resistance of V0.91Ti0.09O2 and V0.982Nb0.018O2 films, which exhibited non-hysteretic MI transitions, were -24.8%/degrees C at 46 degrees C and -21.6%/degrees C at 19 degrees C, respectively. (C)2011 The Ceramic Society of Japan. All rights reserved.

引用

页码：577 / 580

页数：4

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