Electric-Field-Induced Polarization Enhancement of Vinylidene Fluoride/Trifluoroethylene Copolymer Ultrathin Films
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作者:
Mabuchi, Yuichiro
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Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Mabuchi, Yuichiro
[1
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Nakajima, Takashi
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Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Nakajima, Takashi
[1
]
Furukawa, Takeo
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Kobayasi Inst Phys Res, Tokyo 1850022, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Furukawa, Takeo
[2
]
Okamura, Soichiro
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Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Okamura, Soichiro
[1
]
机构:
[1] Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
We investigated the polarization enhancement in 60-nm-thick vinylidene fluoride/trifluoroethylene (VDF/TrFE) films without thermal annealing by applying repeated bipolar electric pulses The remnant polarization was 8.4 mC/m(2) in as-spin-coated films and increased to up to 45 mC/m(2) when 105 pulses were applied. Although the remnant polarization was half and the coercive field twice those of annealed films, the electrically treated film had a markedly smoother surface than the annealed film Finally, a 15-nm-thick ferroelectric VDF/TrFE film with low conductivity was fabricated by electric treatment; annealed films with the same thickness experienced a severe short-circuit problem originating from the surface roughness. (C) 2011 The Japan society of Applied Physics
机构:
Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Mabuchi, Yuichiro
Nakajima, Takashi
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Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Nakajima, Takashi
Chaudhuri, Kaustav
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Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USATokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Chaudhuri, Kaustav
Evans, James E.
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Univ Calif Davis, Dept Mol & Cellular Biol, Davis, CA 95616 USATokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Evans, James E.
Browning, Nigel D.
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Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA
Univ Calif Davis, Dept Mol & Cellular Biol, Davis, CA 95616 USATokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
Browning, Nigel D.
Okamura, Soichiro
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Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
机构:
Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
Zhu, GuoDong
Gu, Yin
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Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
Gu, Yin
Yu, Hao
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Fudan Univ, ASIC, Shanghai 200433, Peoples R China
Fudan Univ, Sch Microelect, Syst State Key Lab, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
Yu, Hao
Fu, ShaoSong
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Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
Fu, ShaoSong
Jiang, YuLong
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Fudan Univ, ASIC, Shanghai 200433, Peoples R China
Fudan Univ, Sch Microelect, Syst State Key Lab, Shanghai 200433, Peoples R ChinaFudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
机构:
Tokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Ishii, Hajime
Nakajima, Takashi
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Nakajima, Takashi
Furukawa, Takeo
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机构:
Kobayashi Inst Phys Res, Kokubunji, Tokyo 1850022, JapanTokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
Furukawa, Takeo
Okamura, Soichiro
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Tokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, JapanTokyo Univ Sci, Fac Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
机构:
Department of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, JapanDepartment of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
Ishii, Hajime
Nakajima, Takashi
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机构:
Institute of Material Research, Tohoku University, Sendai 980-8577, JapanDepartment of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
Nakajima, Takashi
Furukawa, Takeo
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Kobayashi Institute of Physical Research, Kokubunji, Tokyo 185-0022, JapanDepartment of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan
Furukawa, Takeo
Okamura, Soichiro
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Department of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, JapanDepartment of Applied Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan