Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures

被引：48
作者：
Hou, Y. N. [1 ]
Mei, Z. X. [1 ]
Liang, H. L. [1 ]
Ye, D. Q. [1 ]
Liang, S. [1 ]
Gu, C. Z. [1 ]
Du, X. L. [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 26期
基金：
美国国家科学基金会;
关键词：
BEAM EPITAXIAL-GROWTH; UV-DETECTOR; ZNO; FILMS; FABRICATION; MGXZN1-XO; SAPPHIRE; ARRAYS; BLIND;
D O I：
10.1063/1.3600789
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A comparative study of n-MgZnO/p-Si UV-B photodetector performance was carried out with different device structures. The experimental results demonstrate superior photoresponse characteristics of the p-n heterojunction detector against the Schottky type metal-semiconductor-metal counterpart, including a sharper cutoff wavelength at 300 nm, a larger peak photoresponsivity of 1 A/W, and a faster response speed. The role of built-in field and low interface scattering in p-n heterojunction is explored, and the energy band diagram of n-MgZnO/p-Si is employed to interpret the efficient suppression of visible light photoresponse from Si substrate, revealing the applicability of this heterostructure in fabrication of deep ultraviolet detectors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600789]
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页数：3
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