Electrical characteristics of a-Si:H TFTs fabricated on polyimide and glass substrates

被引：0

作者：

Huang, Jung-Jie ^{[1
]}

Liu, Chan-Jui ^{[1
]}

Tsai, Cheng-Ju ^{[1
]}

Lee, Po-Feng ^{[1
]}

Chen, Yung-Pei ^{[1
]}

Kung, Bo-Cheng ^{[1
]}

Yeh, Yung-Hui ^{[1
]}

机构：

[1] Ind Technol Res Inst DTC ITRI, Display Technol Ctr, Hsinchu 310, Taiwan

来源：

IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous silicon thin film transistors were fabricated by plasma-enhanced chemical vapor deposition on both transparent polyimide and glass substrate. The electrical characteristics and surface morphology of a-Si:H/SiNx:H films on polyimide and glass substrate were compared. TFTs fabricated on polyimide substrate showed better electrical performance than on glass substrate. Moreover, the threshold voltage shift of TFTs on polyimide substrate is smaller than that of TFT on glass. The superior electrical characteristics of TFTs on polyimide substrate compared to that on glass substrate, was attributed to the better surface morphology of a-Si:H/SiNx:H film on polyimide.

引用

页码：489 / 492

页数：4

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