Experiment Characterization of Front and Back Interfaces Impact on Back Gate Modulation in UTBB-FDSOI MOSFETs

被引：3

作者：

Chen, Wangyong ^{[1
]}

Cai, Linlin ^{[1
]}

Cao, Yongfeng ^{[2
]}

Liao, Duanquan ^{[2
]}

Tian, Ming ^{[2
]}

Xing, Zhang ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Du, Gang ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Shanghai Huali Microelect Corp, Shanghai 201203, Peoples R China

来源：

2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2019年

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Back gate modulation; Hot carrier injection; UTBB FDSOI; Interface state;

D O I：

10.1109/ipfa47161.2019.8984894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical method considering the charge coupling effect in UTBB FDSOI device is proposed to extract trap densities at front and back interfaces. The back-gate modulation with the dependence of interface traps is investigated in the advanced UTBB FDSOI device stressed by hot carrier injection (HCI). The experimental results show that the initial back-interface states are more than that of the front interface. Both the trap densities of the front and back interfaces increase with longer HCI stress. Moreover, the HCI stress weakens back-biasing capability especially at the scenario of the high-performance application. Larger forward back bias leads to the more charged back-interface states, thereby reducing the modulation range of back biasing.

引用

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