Control of epitaxial growth orientation and anisotropic thermoelectric properties of misfit-type Ca3Co4O9 thin films

被引:38
作者
Sakai, A [1 ]
Kanno, T [1 ]
Yotsuhashi, S [1 ]
Odagawa, A [1 ]
Adachi, H [1 ]
机构
[1] Mitsushita Elect Ind Co Ltd, Adv Technol Res Labs, Kyoto 6190237, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期
关键词
thermoelectric; Ca3Co4O9; anisotropic; epitaxial control; Seebeck;
D O I
10.1143/JJAP.44.L966
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the control of crystal orientation in misfit-type layered cobaltite Ca3Co4O9 thin films by rf-planar magnetron sputtering and succeeded in growing epitaxial films with c-axis, a-axis and b-axis orientations normal to the substrate. Anisotropic transport properties (parallel to the CoO2 layers and perpendicular to the CoO2 layers) were measured using the b-axis-oriented epitaxial films with a layered structure perpendicular to the substrate surface. The resistivity parallel to the CoO2 layers (rho(a)) is about 8 m Omega cm at room temperature while that perpendicular to the CoO2 layers (rho(c)) is about 300 m Omega cm; the anisotropy is estimated to be about 40. Thermoelectric anisotropy is not considerably pronounced; the parallel Seebeck coefficient S-a is measured to be 110 mu V/K and the perpendicular S-c is 40 mu V/K at room temperature.
引用
收藏
页码:L966 / L969
页数:4
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