Deep electron and hole traps in neutron transmutation doped n-GaN

被引：18

作者：

Lee, In-Hwan ^{[1
,2
]}

Polyakov, A. Y. ^{[1
,2
]}

Smirnov, N. B. ^{[3
]}

Govorkov, A. V. ^{[3
]}

Kozhukhova, E. A. ^{[3
]}

Kolin, N. G. ^{[4
]}

Boiko, V. M. ^{[4
]}

Korulin, A. V. ^{[4
]}

Pearton, S. J. ^{[5
]}

机构：

[1] Chonbuk Natl Univ, Sch Adv Mat Engn, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Res Inst Adv Mat Dev, Chonju 561756, South Korea

[3] Inst Rare Met, Moscow 119017, Russia

[4] Karpov Inst Phys Chem, Obninsk Branch Fed State Unitary Enterprise, Obninsk 249033, Kaluga Region, Russia

[5] Univ Florida, Dept Mat Sci, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 04期

关键词：

annealing; deep levels; doping profiles; electron traps; gallium compounds; germanium; hole traps; III-V semiconductors; neutron effects; semiconductor doping; semiconductor thin films; vacancies (crystal); wide band gap semiconductors; YELLOW LUMINESCENCE; REACTOR NEUTRONS; VACANCIES; CENTERS; FILMS; GAAS; BAND;

D O I：

10.1116/1.3596571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In neutron transmutation doped n-GaN, the electrical properties are found to be dominated not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps at 0.45 or 0.2 eV. The traps switch from the former to the latter when the anneal temperature increased from 800 to 1000 degrees C. The concentrations of both traps rose linearly with neutron fluence and were close to the concentration of Ge donors, suggesting they are Ge complexed with different radiation defects. The authors note the similarity of the properties of these traps to the properties of the dominant electron traps in as-irradiated n-GaN. They also observed prominent hole traps with a level near E-v+1.2 eV. These traps were not detected in virgin or as-irradiated samples. The concentration of the 1.2 eV hole traps increased linearly with neutron fluence, and these traps were assigned to Ga vacancy complexes with oxygen. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3596571]

引用

页数：6

共 23 条

[1] Proton bombardment-induced electron traps in epitaxially grown n-GaN [J].