Direct Probe of the Ferromagnetic Proximity Effect at the Interface of SnTe/Fe Heterostructure by Polarized Neutron Reflectometry

被引：2

作者：

Akiyama, Ryota ^{[3
]}

Ishikawa, Ryo ^{[1
]}

Akutsu-Suyama, Kazuhiro ^{[2
]}

Nakanishi, Ryosuke ^{[3
]}

Tomohiro, Yuta ^{[1
]}

Watanabe, Kazumi ^{[3
]}

Iida, Kazuki ^{[2
]}

Mitome, Masanori ^{[4
]}

Hasegawa, Shuji ^{[3
]}

Kuroda, Shinji ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Comprehens Res Org Sci & Soc CROSS, Neutron Sci & Technol Ctr, Tokai, Ibaraki 3191106, Japan

[3] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan

[4] Natl Inst Mat Sci NIMS, Electron Microscopy Anal Stn, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2022年 / 13卷 / 35期

基金：

日本学术振兴会;

关键词：

TOPOLOGICAL CRYSTALLINE INSULATOR; 111; SURFACE; STATE; REALIZATION; REFLECTION; THICKNESS; TRANSPORT; PHASE; FILMS;

D O I：

10.1021/acs.jpclett.2c01478

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Introducing magnetic order into a topological insulator (TI) system has attracted much attention with an expectation of realizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) and axion insulator states. The magnetic proximity effect (MPE) is one of the promising schemes to induce the magnetic order on the surface of a TI without introducing disorder accompanied by doping magnetic impurities in the TI. In this study, we investigate the MPE at the interface of a heterostructure consisting of the topological crystalline insulator (TCI) SnTe and Fe by employing polarized neutron reflectometry. The ferromagnetic order penetrates & SIM;2.2 nm deep into the SnTe layer from the interface with Fe, which persists up to room temperature. This is induced by the MPE on the surface of the TCI preserving the coherent topological states without introducing the disorder by doping magnetic impurities. This would open up a way for realizing next-generation spintronics and quantum computational devices.

引用

页码：8228 / 8235

页数：8

共 48 条

[1] Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe [J].