Annealing Temperature Dependence of Properties of Cu2ZnSnS4 Thin Films Prepared by Sol-Gel Sulfurization Method

被引:30
|
作者
Maeda, Kazuya [1 ]
Tanaka, Kunihiko [1 ]
Nakano, Yuya [1 ]
Uchiki, Hisao [1 ]
机构
[1] Nagaoka Univ Technol, Dept Elect Engn, Niigata 9402188, Japan
关键词
ZN-SN PRECURSORS; SPRAY-PYROLYSIS; CELLS; FABRICATION;
D O I
10.1143/JJAP.50.05FB08
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cu2ZnSnS4 (CZTS) thin films were fabricated by a sol-gel sulfurization method with a rapid thermal process. The films preheated at 250 degrees C for 1h and sulfurized from 350 to 600 degrees C for 1 h were investigated. The chemical composition of sulfur was 40% for the preheated film and 50% for the films sulfurized at temperatures higher than 400 degrees C. The grain size of the films markedly increased with increasing sulfurization temperature from 400 to 450 degrees C and that of the films sulfurized at temperatures higher than 450 degrees C was similar to 2 mu m. The preheated film and the films sulfurized at temperatures lower than 400 degrees C were composed of CuxS and CZTS. The CuxS phase was eliminated from the CZTS films by sulfurization at temperatures higher than 500 degrees C. (C) 2011 The Japan Society of Applied Physics
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Dependence on Annealing Temperature of Properties of Cu2ZnSnS4 Thin Films Prepared by Sol-Gel Sulfurization Method
    Maeda, Kazuya
    Tanaka, Kunihiko
    Fukui, Yuki
    Uchiki, Hisao
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (01)
  • [2] Effect of UV irradiation on Cu2ZnSnS4 thin films prepared by the sol-gel sulfurization method
    Miyazawa, Hayato
    Tanaka, Kunihiko
    Uchiki, Hisao
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 652 : 400 - 406
  • [3] Effects of sulfurization temperature on phases and opto-electrical properties of Cu2ZnSnS4 films prepared by sol-gel deposition
    Long, Bo
    Cheng, Shuying
    Lai, Yunfeng
    Zhou, Haifang
    Yu, Jinling
    Zheng, Qiao
    THIN SOLID FILMS, 2014, 573 : 117 - 121
  • [4] Effects of the sulfurization temperature on sol gel-processed Cu2ZnSnS4 thin films
    Kahraman, S.
    Cetinkaya, S.
    Podlogar, M.
    Bernik, S.
    Cetinkara, H. A.
    Guder, H. S.
    CERAMICS INTERNATIONAL, 2013, 39 (08) : 9285 - 9292
  • [5] Sol-gel processed Cu2ZnSnS4 thin films for a photovoltaic absorber layer without sulfurization
    Park, Hyungjin
    Hwang, Young Hwan
    Bae, Byeong-Soo
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2013, 65 (01) : 23 - 27
  • [6] Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization
    Zhang Ke-Zhi
    He Jun
    Wang Wei-Jun
    Sun Lin
    Yang Ping-Xiong
    Chu Jun-Hao
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 34 (02) : 129 - 133
  • [7] Properties of kesterite Cu2ZnSnS4 (CZTS) thin films prepared by sol-gel method using two types of solution
    Chung, Chulwon
    Rhee, Dongjoon
    Yoo, Dongjun
    Choi, Moonsuk
    Heo, Seung Chan
    Kim, Dohyung
    Choi, Changhwan
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2013, 14 (02): : 255 - 259
  • [8] Cu2ZnSnS4 polycrystalline thin films with large densely packed grains prepared by sol-gel method
    Jiang, Minlin
    Li, Yong
    Dhakal, Rabin
    Thapaliya, Prem
    Mastro, Michael
    Caldwell, Joshua D.
    Kub, Fritz
    Yan, Xingzhong
    JOURNAL OF PHOTONICS FOR ENERGY, 2011, 1
  • [9] Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature
    Ahmoum, Hassan
    Chelvanathan, Puvaneswaran
    Su'ait, Mohd Sukor
    Boughrara, Mourad
    Li, Guojian
    Gebauer, Ralph
    Sopian, Kamaruzzaman
    Kerouad, Mohamed
    Amin, Nowshad
    Wang, Qiang
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 132
  • [10] Sol-gel synthesis of Cu2ZnSnS4 thin films under mild conditions
    Guo, Xinhua
    Han, Jiecai
    Zhang, Huayu
    Lv, Xinguang
    Yan, Jianwei
    Sun, Rui
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 697 : 361 - 366