Terahertz Emission from Semiconductors due to the Lateral Surface Photocurrent

被引：0

作者：

Ziaziulia, P. A. ^{[1
]}

Malevich, V. L. ^{[2
]}

Manak, I. S. ^{[1
]}

机构：

[1] Belarusian State Univ, Nezalezhnasti Ave 4, Minsk 220030, BELARUS

[2] Natl Acad Sci Belarus, Inst Phys, Minsk 220072, BELARUS

来源：

ICONO 2010: INTERNATIONAL CONFERENCE ON COHERENT AND NONLINEAR OPTICS | 2011年 / 7993卷

关键词：

terahertz radiation; femtosecond pulse; surface photocurrent; energy spectrum nonparabolicity; particles simulation; GENERATION; INAS;

D O I：

10.1117/12.881873

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The lateral photocurrent caused by anisotropic momentum distribution of photoelectrons in semiconductor excited by linearly polarized femtosecond laser radiation is calculated analytically and numerically with the use of particle method. We have considered three mechanisms of this effect: diffusive scattering of photoelectrons on the surface, nonparabolicity of conduction band and dependence of electron momentum relaxation time on energy. It has been shown that contributions of the lateral and normal photocurrent components to terahertz emission can be comparable.

引用

页数：8

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