Improving the performance of AlGaInP laser diode by oxide annealing

被引：3
作者：
Hwang, JD [1 ]
Lin, CY [1 ]
机构：
[1] DA Yeh Univ, Dept Elect Engn, Changhua, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 10A期
关键词：
AlGaInP; laser diodes; threshold current; slope efficiency; external quantum efficiency; characteristic temperature;
D O I：
10.1143/JJAP.42.L1116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaInP laser diodes (LDs) with and without the Post SiO2 deposition thermal annealing process have been fabricated. It was found that we could reduce threshold current (I-th) and achieve higher values of slope efficiency (SE) and external quantum efficiency of the LDs by introducing such a post SiO2 deposition thermal annealing process. Characteristic temperature (T-O) observed from the LDs with the Post SiO2 deposition thermal annealing process was also found to be higher.
引用
收藏
页码：L1116 / L1118
页数：3
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