Effects of Mg on the electrical characteristics and thermal stability of MgxZn1-xO thin film transistors

The effects of the Mg composition (x=0, 0.06, and 0.10) on the electrical characteristics and thermal stability of MgxZn1-xO thin film transistors (TFTs) are investigated. The Mg0.06Zn0.94O TFT shows the smallest subthreshold slope and highest field effect mobility. The O-1s spectra of x-ray photoelectron spectroscopy measurements indicate that the oxygen vacancies are reduced in Mg0.06Zn0.94O relative to a pure ZnO channel device. Mg0.06Zn0.94O TFTs also show higher thermal stability compared to the pure ZnO TFTs, which is mainly attributed to the suppression of oxygen vacancies in the channel. (c) 2011 American Institute of Physics. [doi:10.1063/1.3567533]